The BJT transistors are ‘bipolar’ devices because they operates with both types of charge carriers, such as electrons and holes but the FET transistors are ‘unipolar’ devices because they operate with the charge carriers of either electrons (for N-channel) or holes (for P-channel). Artinya kita carikan nomor seri yang lain, akan tetapi memiliki fungsi dan kegunaan yang sama. In BJT transistor a small input current operates the large load, but in FET a small input voltage operates the large load at the output. Berikut karakteristik transistor C945 yang diperlukan untuk bahan perbandingan dalam mencari persamaan. In the FET transistors the output current passes between the drain and source terminals and this path is called channel and this channel may be made of either P-type or N-type semiconductor materials. In BJT transistors the output current is controlled by the input current which is applied to the base, but in the FET transistors the output current is controlled by the input voltage applied to the gate terminal. The FET transistors have basically three terminals, such as Drain (D), Source (S) and Gate (G) which are equivalent to the collector, emitter and base terminals in the corresponding BJT transistor. Type: p-n-p Power Dissipation: 0.4watts High voltage and High current: Vceo 50v and Ic 150mA Low Noise: 1dB Case Material. Introduction The FET transistors are voltage controlled devices, where as the BJT transistors are current controlled devices. Persamaan transistor memberikan: I C I B 1) penguatan transistor dari persamaan di atas, jika I B 0 maka I C 0 (transistor tidak mengantarkan arus Ic, dengan kata lain posisi cut-off atau mati).
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